Full Name: Training Courses on Compact Modeling (TCCM 2010)
Location: Tarragona, Spain
Venue: Technical School of Engineering, University Rovira i Virgili
Date: Jun 30, 2010 - Jul 1, 2010
Description:
Physically-based compact modeling of electron devices is crucial for accurate circuit design and simulation. Actually, one of the main limitations to the use of novel device structures in circuit design is the lack of appropriate compact models. On the other hand, compact models are also useful to easily predict the performance of new device technologies. For these reasons, courses on compact modeling will be especially useful to both device engineers and circuit designers.
The first edition of the Training Courses on Compact Modeling (TCCM) will consist of a set of lectures addressing relevant topics in the compact modeling of advanced electron devices. Most of the courses will target compact modeling issues applicable to many electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs.
The Training Courses on Compact Modeling will be held in Tarragona (Spain) on June 30-July 1, in coordination with two other events partially or totally related to compact modeling: the 8th Graduate Student Meeting on Electronic Engineering (June 28-29) and the 3rd International Workshop on Compact Thin Film Transistor Modeling (July 2).
The Training Courses on Compact Modeling are sponsored by the FP7 “COMON” IAPP Project and the Universitat Rovira i Virgili in collaboration with the IEEE EDS Compact Modeling Technical Committee.
Topics:
A total of 10 lectures will be conducted (the final programme, with the timetable, will be available soon):
1. Tibor Grasser (TU-Wien, Austria) - Transport modeling
2. Tor A Fjeldly (UniK, Norway) - Analytical 2D and 3D electrostatic modeling
3. Jamal Deen (McMaster University, Canada) - Noise modeling
4. Benjamin Iniguez (URV, Spain) - Analytical small-signal modeling
5. Ilcho Angelov (Chalmers University, Sweden) - High frequency device modeling
6. Renaud Gillon (On Semiconductor, Belgium) - Electro-thermal and reliability modeling
7. Sorin Cristoloveanu (MINATEC and LETI, France) - Electrical characterization of SOI and Multi-Gate MOSFETs
8. Asen Asenov (University of Glasgow) - Statistical variability and corresponding compact model strategies
9. Kiyoh Itoh (Hitachi, Japan) - "Variability-conscious Circuit Designs for Low-voltage Nano-scale CMOS LSIs"
10. Wladek Grabinski - "GNU/Open Source CAD Tools for Verilog-A Compact Model Standardization"
Other details:
The Training Courses on Compact Modeling will be especially suited to researchers from both industry and academia working on electron device modeling, circuit and systems design and electronic design automated tools. In particular, the courses will be very interesting and useful to students working on these topics.
Registration will be available soon. Registration will include lunch on June 30 and July 1 and a gala dinner on June 30. The deadline for advance registration is June 13, 2010.
The advanced registration fee will be 100 Euro for students and 130 Euro for non-students. After June 13, the registration fee is 150 Euro for students and 180 Euro for non-students. Members of the teams participating in the COMON project are exempted from paying the fee.
General Chair Person
Prof. Benjamin Iniguez, Universitat Rovira i Virgili, Spain
Organizing Committee Members
Benjamin Iniguez (Universitat Rovira i Virgili, Spain)
Lluis F. Marsal (Universitat Rovira i Virgili, Spain)
Josep Pallares (Universitat Rovira i Virgili, Spain)
Antonio Lazaro (Universitat Rovira i Virgili, Spain)
Roger Cabre (Universitat Rovira i Virgili, Spain)
Wladek Grabinski (GMC, Switzerland)
Jamal Deen (McMaster University, Canada)
Rodrigo Picos (Universitat de les Illes Balears, Spain)
Tor A. Fjeldly (UniK, Norway)
Antonio Cerdeira (CINVESTAV, Mexico)
Juan Bautista Roldan (Universidad de Granada, Spain)
Francois Lime (Universitat Rovira i Virgili, Spain)
Romain Ritzenthaler (Universitat Rovira i Virgili, Spain)
Bogdan Nae (Universitat Rovira i Virgili, Spain)
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