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Training Courses on Compact Modelling
Physically-based compact modeling of electron devices is crucial for accurate circuit design and simulation. Actually, one of the main limitations to the use of novel device structures in circuit design is the lack of appropriate compact models. On the other hand, compact models are also useful to easily predict the performance of new device technologies. For these reasons, courses on compact modeling will be especially useful to both device engineers and circuit designers. Building on the success of the first edition, celebrated in 2010, the second International Training Course on Compact Modelling (TCCM 2012) will consist of a set of lectures addressing relevant topics in the compact modeling of advanced electron devices. Most of the courses will target compact modeling issues applicable to many electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs. The Training Course on Compact Modeling will be held in Tarragona (Spain) on June 28-29, in coordination with two other events partially or totally related to compact modeling: the 10th Graduate Student Meeting on Electronic Engineering (June 21-22) and the 8th International Conference on Organic Electronics (ICOE 2012) (June 25-27). The Training Course on Compact Modeling is an event sponsored by the FP7 “COMON” IAPP Project and the Universitat Rovira i Virgili in collaboration with the IEEE EDS Compact Modeling Technical Committee.

Training Courses on Compact Modelling

Physically-based compact modeling of electron devices is crucial for accurate circuit design and simulation. Actually, one of the main limitations to the use of novel device structures in circuit design is the lack of appropriate compact models. On the other hand, compact models are also useful to easily predict the performance of new device technologies. For these reasons, courses on compact modeling will be especially useful to both device engineers and circuit designers.

Building on the success of the first edition, celebrated in 2010, the second International Training Course on Compact Modelling (TCCM 2012) will consist of a set of lectures addressing relevant topics in the compact modeling of advanced electron devices. Most of the courses will target compact modeling issues applicable to many electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs.

The Training Course on Compact Modeling will be held in Tarragona (Spain) on June 28-29, in coordination with two other events partially or totally related to compact modeling: the 10th Graduate Student Meeting on Electronic Engineering (June 21-22) and the 8th International Conference on Organic Electronics (ICOE 2012) (June 25-27).

The Training Course on Compact Modeling is an event sponsored by the FP7 “COMON” IAPP Project and the Universitat Rovira i Virgili in collaboration with the IEEE EDS Compact Modeling Technical Committee.

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